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DMN32D2LDF
COMMON SOURCE DUAL N-CHANNEL
ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
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Common Source Dual N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage, 1.2V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Small Surface Mount Package
ESD Protected Gate
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
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Case: SOT-353
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
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Qualified to AEC-Q 101 Standards for High Reliability
SOT-353
G 2
S
G 1
G 2
S
G 1
Q 1
Q 2
ESD PROTECTED
TOP VIEW
BOTTOM VIEW
D 2 D 1
TOP VIEW
D 2 D 1
Schematic Diagram
Maximum Ratings Q 1 , Q 2
@T A = 25°C unless otherwise specified
Characteristic
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Thermal Characteristics Q 1 , Q 2
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V DSS
V GSS
I D
@T A = 25°C unless otherwise specified
P D
R θ JA
T j , T STG
Value
30
± 10
400
280
446
-55 to +150
Unit
V
V
mA
mW
° C/W
° C
Electrical Characteristics Q 1 , Q 2
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BV DSS
30
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V
V GS = 0V, I D = 250 μ A
Zero Gate Voltage Drain Current
Gate-Body Leakage
@ T C = 25°C
I DSS
I GSS
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1
± 10
± 1
μ A
μ A
V DS = 30V, V GS = 0V
V GS = ±10V, V DS = 0V
V GS = ±5V, V DS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
0.6
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100
0.5
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1.2
2.2
1.5
1.2
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1.4
V
Ω
mS
V
V DS = V GS , I D = 250 μ A
V GS = 1.8V, I D = 20mA
V GS = 2.5V, I D = 20mA
V GS = 4.0V, I D = 100mA
V DS =10V, I D = 0.1A
V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
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39
10
3.6
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pF
pF
pF
V DS = 3V, V GS = 0V
f = 1.0MHz
Switching Time
Turn-on Time
Turn-off Time
t on
t off
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11
51
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nS
nS
V DD = 5V, I D = 10 mA,
V GS = 0-5V
Notes:
1.
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
DMN32D2LDF
Document number: DS31238 Rev. 3 - 2
1 of 4
www.diodes.com
January 2008
? Diodes Incorporated
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